Devices Offer Drop-in Replacements for Competing Solutions in Medium to High Frequency ApplicationsMALVERN, Pa., Jan. 28, ...

GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...

Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed ...

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...

Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

The market is poised for growth driven by increased EV demand, AI-enhanced motor control, renewable energy expansion, and SiC ...

Electronic Design's Lee Goldberg chronicles a year of powerful innovations with some of 2025's most notable developments in power devices, power conversion, and power ...