Electronic Design

1200 V SiC MOSFET Design Kit

Cree, Inc. introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. The design ...
Electronic Design

Dynamic characterization of high-speed SiC power MOSFETs and diodes

High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...
Nature

Current Sharing in Parallel-Connected Silicon Carbide MOSFETs

Silicon carbide (SiC) MOSFETs are increasingly used in high-power applications owing to their superior switching speeds, low on‐resistance and enhanced thermal performance. In order to achieve higher ...
Semiconductor Engineering

Design Comparison of SiC MOSFETs for Linear-Mode Operation

“Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a ...
Business Wire

Cree Launches Industry’s First Commercial Silicon Carbide Power MOSFET; Destined to Replace Silicon Devices in High Voltage (≥ 1200V) Power Electronics

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
Electronics Weekly

Half-bridge reference design allows IGBTs, GaN hemt, SiC mosfet and compound cascode switches to be compared

Power supply maker Recom has introduced a universal half-bridge development board and reference design. It is “a design that can be used to compare the real-life performance of various high power IGBT ...
Nasdaq

Microchip to Provide Silicon Carbide MOSFETs and Digital Gate Drivers for Mersen’s SiC Power Stack Reference Design

Electric vehicle, commercial transportation, renewable energy and storage system designers can benefit from silicon carbide stack solution that drives performance and cost efficiencies and accelerates ...

Vishay Intertechnology 1200 V SiC MOSFET Power Modules in Industry-Standard SOT-227 Package Increase Power Efficiency

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
EDN

Infineon rolls out enhanced 1,200-V SiC MOSFETs

Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...
EDN

Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

As silicon (Si), gallium-nitride (GaN), and silicon-carbide (SiC) processes are maturing, so, too, are their suppliers’ expertise and creativity. It is worthwhile to examine the pros and cons of each ...
Morningstar

NoMIS Power Launches 3.3 kV SiC MOSFET Lineup, Expanding Portfolio for Medium-Voltage Power Electronics

ALBANY, N.Y., Sept. 8, 2025 /PRNewswire/ --NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced the commercial release of its first 3.3 ...