Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
As global energy demand surges—driven by AI-hungry data centers, advanced manufacturing, and electrified ...
The third-generation series of QSiC MOSFET modules from SemiQ Inc. offer current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07ºC/W to address the growing demand ...
The SiC power MOSFETs segment held a 39.4% share in 2024, driven by their superior efficiency, lower switching losses, and higher power density. These features enable faster, more compact, and ...
By traditional metrics, NVTS stock looks expensive. The company has very low current revenue and is not yet profitable. Yet ...
Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.
SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
Santa Clara, CA and Kyoto, Japan, Jan. 22, 2026 (GLOBE NEWSWIRE) -- ROHM today announced it has developed the “ UCR10C Series ”, which has the industry's highest rated power for 2012-size shunt ...
ROHM has developed the ‘BD9xxN5 Series’ of LDO regulator ICs with 500mA output current, featuring its proprietary control ...
South Korea is stepping up policy support for next-generation power semiconductors as part of a broader push to strengthen domestic chip manufacturing and reduce reliance on overseas suppliers, with ...
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