Alpha and Omega Semiconductor unveils 600V Super Junction MOSFET platform, expanding its high‑voltage power portfolio.

AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...

Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...

Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.

Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...