TOKYO — Fabless startup Silicon7 Inc. said it has developed a one-transistor SRAM chip that can replace today's six-transistor SRAMs. The chip combines Silicon7's CompactCell SRAM (CCSRAM) technology ...

For years now, the DRAM industry has been an example of change by grinding evolution. Even in detail, DRAM structures have changed little, and then only when necessity would accept no alternative.

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

TOKYO, December 12, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will ...

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...

Data can be read by applying a small pulse to the selected bit-cell transistor and comparing the channel current to the current of a reference cell. Implemented in a standard 90-nm SOI process, the ...

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...