Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...
Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.
Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) on Monday unveiled five new 1200-volt silicon carbide power modules ...
Abstract: The different operating modes of the boost power factor correction converter pose a challenge to accurately estimate dc-link capacitance across a wide power range. In order to meet the ...
Abstract: Analyzing the effect of temperature on the capacitance value of the film capacitors used in the electromagnetic pulse (EMP) simulator helps to ensure the stability of the output pulse. In ...
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