Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Download this article in PDF format. When you connect the gate to the source of a JFET (junction field-effect transistor), it becomes a two-terminal current source. The current that will flow is ...

JFETs are, almost invariably, depletion mode devices, which means that there will be some drain current at a zero-applied gate-source potential. This current will decrease in a fairly linear manner as ...

In 5nm and 7nm nodes, the source/drain contact area of the transistors is so small that the contact resistance threatens to result in suboptimal transistor functioning. Researchers have therefore been ...