In a major industry breakthrough, Applied Novel Devices (AND) has introduced a new class of silicon power MOSFET technology. This ANDFET technology offers near-zero reverse-recovery losses, bringing ...

These new generation 100 V eGaN FETs are ideal for 48-V OUT synchronous rectification, class-D audio, infotainment, and lidar. EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...

Revolutionary 10 kV SiC Technology Delivers Game-Changing Solution for Grid Modernization, Industrial Electrification and AI Data Center Infrastructure Wolfspeed, Inc., a global leader in silicon ...

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its ...

The RJF0605DPD is silicon N-channel MOSFET power switching featuring a built-in over temperature shutdown circuit. It has latch type shut down operation and a built-in current limitation circuit.The ...

John Palmour, CTO at Cree, sat down with Semiconductor Engineering to talk about silicon carbide, how it compares to silicon, what’s different from a design and packaging standpoint, and where it’s ...

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings ...