Electronic Design

1200 V SiC MOSFET Design Kit

Cree, Inc. introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. The design ...
EDN

High-performance SiC MOSFET technology for power electronics design

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Electronic Design

Dynamic characterization of high-speed SiC power MOSFETs and diodes

High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...
Semiconductor Engineering

Design Comparison of SiC MOSFETs for Linear-Mode Operation

“Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a ...
Business Wire

Cree Launches Industry’s First Commercial Silicon Carbide Power MOSFET; Destined to Replace Silicon Devices in High Voltage (≥ 1200V) Power Electronics

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
EDN

Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

As silicon (Si), gallium-nitride (GaN), and silicon-carbide (SiC) processes are maturing, so, too, are their suppliers’ expertise and creativity. It is worthwhile to examine the pros and cons of each ...