(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
Using the latest generation of trench and polar power MOSFET technologies, both trench and polar P-channel power MOSFETs have been developed that retain all the features of comparable N-channel power ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback