In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.

On Nov. 12, Intel shipped the first 45-nanometer microprocessors using high-k metal-gate technology. Whether to underscore the significance of the event or to reinforce that his famous law remains on ...

Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...