A simple plasma-based edge termination approach yields 10 kV-class GaN diodes with a lateral geometry.

For decades, silicon has ruled as the undisputed leader in power electronics. But as silicon hits its performance limits, gallium-nitride (GaN) power devices are gaining ground. With faster switching ...

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...

Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...

In the past few years, you’ve probably heard a lot about Gallium Nitride or GaN when it comes to chargers. Many companies that make chargers and sell them on Amazon, have been using GaN for quite some ...