As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...

Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

TOKYO, Dec 5, 2019 - (JCN Newswire) - - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm ...

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...