Tezzaron Semiconductor Inc. last week announced a new type of pseudo-static memory technology intended to provide an alternative to embedded SRAM or DRAM in discrete memory ICs and systems-on-chip.

SNIA announces the MRAM Alliance Special Interest Group to support a developing ecosystem for MRAM memory for many consumer, industrial and data center applications.

TOKYO — Renesas Technology Corp. has developed a new SRAM memory cell combining SRAM and DRAM technologies. The new cell is about half the size of conventional SRAM cells but retains such advantages ...

The inability of SRAM to scale has challenged power and performance goals forcing the design ecosystem to come up with strategies that range from hardware innovations to re-thinking design layouts. At ...