TL;DR: Samsung has delayed mass production of its next-gen HBM4 memory with redesigned 1c DRAM to 2026, aiming for improved yields and performance. Despite increased costs and challenges, the 65% ...
RAM prices have skyrocketed globally in 2025, with industry officials pointing to explosive demand from AI data centers as the primary cause. Mainstream DDR5 memory modules now cost at least twice ...
Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
At a recent event, Samsung presented a paper that described how the company plans to extend today’s planar DRAMs down to 20nm and beyond. This is an amazing feat. Until very recently, most engineers ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
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