Fudzilla

NEO Semiconductor releases 3D NAND-like DRAM cell array

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...
NextBigFuture

NEO Semiconductor 3D X-DRAM With 8x the Density Of DDR5 Computer Memory

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...
EDN

0.4-V DRAM array technology using twin cells for next generation mobile devices

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...
EDN

DRAM basics and its quest for thermal stability by optimizing peripheral transistors

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
Semiconductor Engineering

Virtual Exploration Of Novel Vertical DRAM Architectures

Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...