TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F 2 DRAM, ...

As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...

Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 1Gigabit (Gb) DDR2 DRAM (dynamic random access ...

The OCTRAM utilizes a cylinder-shaped InGaZnO vertical transistor (Fig.1) as a cell transistor. This design enables the adaptation of a 4F 2 DRAM, which offers significant advantages in memory density ...

Fig.2: (a)ON and (b)OFF current properties for the developed InGaZnO transistor (Graphic: Business Wire) Fig.3: Panoramic view of the OCTRAM (Photo: Business Wire) The OCTRAM utilizes a ...